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SEMICONDUCTOR TECHNICAL DATA General Description KHB6D0N40P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB6D0N40P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. A O C F E G B Q I FEATURES VDSS=400V, ID=6.0A Drain-Source ON Resistance : RDS(ON)=1.0 Qg(typ.)=21nC @VGS=10V K M L J D N N P H MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 73 0.59 150 -55 150 6.0 3.6 24 320 7.4 4.5 38 0.3 RATING KHB6D0N40P KHB6D0N40F 400 30 6.0* 3.6* 24* mJ mJ P E DIM MILLIMETERS _ 9.9 + 0.2 A 15.95 MAX B 1.3+0.1/-0.05 C _ D 0.8 + 0.1 _ E 3.6 + 0.2 _ F 2.8 + 0.1 3.7 G H 0.5+0.1/-0.05 1.5 I _ 13.08 + 0.3 J K 1.46 _ 1.4 + 0.1 L _ 1.27+ 0.1 M _ 2.54 + 0.2 N _ 4.5 + 0.2 O _ 2.4 + 0.2 P _ 9.2 + 0.2 Q 1 2 3 UNIT V V 1. GATE 2. DRAIN 3. SOURCE TO-220AB A KHB6D0N40F A F O B G C V/ns K W L W/ D M M J Q Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient H DIM MILLIMETERS _ 10.16 + 0.2 A _ 15.87 + 0.2 B _ C 2.54 + 0.2 _ D 0.8 + 0.1 _ E 3.18 + 0.1 _ F 3.3 + 0.1 _ 12.57 + 0.2 G _ 0.5 + 0.1 H J 13.0 MAX _ K 3.23 + 0.1 L 1.47 MAX _ 2.54 + 0.2 M _ N 4.7 + 0.2 _ O 6.68 + 0.2 P 6.5 _ Q 2.76 + 0.2 RthJC RthCS RthJA 1.71 0.5 62.5 3.31 62.5 /W /W /W N 1 2 3 1. GATE 2. DRAIN 3. SOURCE * : Drain current limited by maximum junction temperature. D TO-220IS G S 2006. 1. 13 Revision No : 0 1/7 KHB6D0N40P/F ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=400V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=3A 400 2.0 0.54 0.9 10 4.0 100 1 V V/ A V nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Reverse Transfer Capacitance Output Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS Note 5) Essentially independent of operating temperature. 2006. 1. 13 Revision No : 0 2/7 KHB6D0N40P/F ID - VDS VGS TOP : 15.0 V 10.0 V 8.0 V 101 7.0 V 6.0 V 5.5 V 5.0 V Bottom: 4.5 V ID - VGS Drain Current ID (A) Drain Current ID (A) 10 1 100 -55 C 150 C 25 C 10 0 10-1 10-1 100 101 10 2 -1 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 3.2 RDS(ON) - ID On - Resistance RDS(ON) () 1.1 2.4 VG = 10V 1.0 1.6 VG = 20V 0.9 0.8 0.8 -100 -50 0 50 100 150 0.0 0 4 8 12 16 20 24 Junction Temperature Tj ( C ) Drain Current ID (A) IDR - VSD Normalized On Resistance RDS(ON) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 RDS(ON) - Tj VGS = 10V ID = 3A Reverse Drain Current IDR (A) 101 100 150 C 25 C 10-1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperature Tj ( C) 2006. 1. 13 Revision No : 0 3/7 KHB6D0N40P/F C - VDS 1600 1400 Qg- VGS Gate - Source Voltage VGS (V) Frequency = 1MHz 12 I = 6A D 10 8 6 4 2 0 0 5 10 15 20 VDS = 80V VDS = 200V VDS = 320V Capacitance (pF) 1200 1000 800 600 400 200 0 10-1 Ciss Coss Crss 100 101 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Safe Operation Area 102 Operation in this area is limited by RDS(ON) Safe Operation Area Operation in this area is limited by RDS(ON) 10 s 102 Drain Current ID (A) 101 Drain Current ID (A) 10s 100s 1ms 10 1 100s 1ms 100 10ms 100ms DC 100 10 ms 100 ms 10-1 Tc= 25 C Tj = 150 C Single nonrepetitive pulse 10-1 DC Tc= 25 C Tj = 150 C Single nonrepetitive pulse 10-2 100 101 102 103 10-2 0 10 101 102 103 Drain - Source Voltage VDS (V) (KHB6D0N40P) Drain - Source Voltage VDS (V) (KHB6D0N40F) ID - Tj 6 5 Drain Current ID (A) 4 3 2 1 0 25 50 75 100 125 150 Junction Temperature Tj ( C ) 2006. 1. 13 Revision No : 0 4/7 KHB6D0N40P/F Rth {KHB6D0N40P} Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 0.1 10-1 0.05 PDM t1 lse 0.02 0.0 1 Si ng l u eP t2 - Duty Factor, D= t1/t2 - RthJC = Tj(max) - Tc PD 101 10-2 10-5 10-4 10-3 10-2 10-1 100 Square Wave Pulse Duration (sec) Rth {KHB6D0N40F} Normalized Transient Thermal Resistance Duly=0.5 100 0.2 0.1 0.05 PDM t1 t2 Si l ng eP se ul 10-1 0.02 0.0 1 - Duty Factor, D= t1/t2 - RthJC = Tj(max) - Tc PD 101 10-2 10-5 10-4 10-3 10-2 10-1 100 Square Wave Pulse Duration (sec) 2006. 1. 13 Revision No : 0 5/7 KHB6D0N40P/F - Gate Charge VGS Fast Recovery Diode 10 V ID 0.8 x VDSS 1.0 mA ID Q Qgs Qgd Qg VGS VDS - Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 0.5 VDSS 25 VDS 10 V ID(t) VGS VDD VDS(t) Time - Resistive Load Switching tp VDS 90% RL 0.5 VDSS 25 VDS 10V VGS 10% td(on) ton tr td(off) tf toff VGS 2006. 1. 13 Revision No : 0 6/7 KHB6D0N40P/F - Source - Drain Diode Reverse Recovery and dv /dt DUT VDS IF Body Diode Forword Current ISD (DUT) IRM di/dt IS Body Diode Reverse Current 0.8 VDSS driver VDS (DUT) Body Diode Recovery dv/dt VSD VDD 10V VGS Body Diode Forword Voltage drop 2006. 1. 13 Revision No : 0 7/7 |
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